First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Abstract

We report the first observation of a two-dimensional electron gas from Shubnikov–de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov–de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm−2.