Concepedia

First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, F. Omnès, S. Ben Armor, L. Dmowski, J. C. Portal

Applied Physics Letters · 1986 · 40 citations · 7 references

DOI

Concepts

Abstract

We report the first observation of a two-dimensional electron gas from Shubnikov–de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov–de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm−2.

References

7

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Self-Consistent Results for a GaAs/Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>As Heterojunction. I. Subband Structure and Light-Scattering Spectra

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Observation of intersubband scattering in a 2-dimensional electron system

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Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration

H. L. Störmer, A. C. Gossard, W. Wiegmann et al. · Applied Physics Letters · 1981 · 149 citations

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The effect of elastic strain on energy band gap and lattice parameter in III-V compounds

G.H. Olsen, C. J. Nuese, R. T. Smith · Journal of Applied Physics · 1978 · 109 citations

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