P. Maurel

First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Manijeh Razeghi, M. Defour, R. Blondeau et al. · Applied Physics Letters · 1988 · 117 citations

Materials Science, Photonics, Ga0.25in0.75as0.5p0.5-inp Laser +15

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, M. Defour et al. · Applied Physics Letters · 1988 · 44 citations

Materials Science, Chemical Engineering, Epitaxial Growth +12

First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, F. Omnès et al. · Applied Physics Letters · 1986 · 40 citations

Semiconductors, Engineering, Physics +14

High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition

Manijeh Razeghi, F. Omnès, M. Defour et al. · Semiconductor Science and Technology · 1990 · 39 citations

Materials Science, Electrical Engineering, Interface Quality +9

First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate

Manijeh Razeghi, M. Defour, F. Omnès et al. · Applied Physics Letters · 1988 · 35 citations

Si Substrate, Engineering, Laser Science +16