First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Manijeh Razeghi, M. Defour, R. Blondeau, +6

Applied Physics Letters

Materials SciencePhotonicsGa0.25in0.75as0.5p0.5-inp LaserRoom TemperatureEngineering +13

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, M. Defour, +3

Applied Physics Letters

Materials ScienceChemical EngineeringEpitaxial GrowthPurest Inp EpilayerEngineering +10

First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, F. Omnès, +3

Applied Physics Letters

SemiconductorsEngineeringPhysicsCrystalline DefectsTopological Heterostructures +12

High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition

Manijeh Razeghi, F. Omnès, M. Defour, +4

Semiconductor Science and Technology

Materials ScienceElectrical EngineeringInterface QualityEngineeringNanoelectronics +7

First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate

Manijeh Razeghi, M. Defour, F. Omnès, +3

Applied Physics Letters

Si SubstrateEngineeringLaser ScienceLaser ApplicationsLaser Physics +14

Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition

Manijeh Razeghi, P-L MEUNIER, P. Maurel

Journal of Applied Physics

Materials ScienceGainas-inp Multiquantum WellsEngineeringGa0.47in0.53as-inp Multiquantum WellsPhysics +11

High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

Manijeh Razeghi, F. Omnès, M. Defour, +1

Applied Physics Letters

Optical MaterialsEngineeringX-ray Diffraction PatternsSilicon SubstratesOptoelectronic Devices +15

High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, F. Omnès, +4

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringSilicon SubstratesOptoelectronic DevicesSemiconductors +14

Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and Ga<i>x</i>In1−<i>x</i>P

Jean-Charles Garcia, P. Maurel, Ph. Bove, +1

Journal of Applied Physics

Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi, J. Nagle, P. Maurel, +2

Applied Physics Letters

Materials SciencePhotoluminescenceEngineeringPhysicsCrystal Growth Technology +12