Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Abstract

Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm−3 , with Hall mobility as high as 6000 cm2 V−1 s−1 at 300 K and 200 000 cm2 V−1 s−1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.