M. Defour

Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition

Dipankar Biswas, Nacer Debbar, P. Bhattacharya et al. · Applied Physics Letters · 1990 · 143 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +10

First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Manijeh Razeghi, M. Defour, R. Blondeau et al. · Applied Physics Letters · 1988 · 117 citations

Materials Science, Photonics, Ga0.25in0.75as0.5p0.5-inp Laser +15

Extremely high electron mobility in a GaAs-Ga<i>x</i>In1−<i>x</i>P heterostructure grown by metalorganic chemical vapor deposition

Manijeh Razeghi, M. Defour, F. Omnès et al. · Applied Physics Letters · 1989 · 51 citations · Full text

Semiconductors, Electron Density, Electrical Engineering +11

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measurements

O. Acher, S. M. Koch, F. Omnès et al. · Journal of Applied Physics · 1990 · 49 citations

Optical Materials, Engineering, Crystal Growth Technology +23

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, M. Defour et al. · Applied Physics Letters · 1988 · 44 citations

Materials Science, Chemical Engineering, Epitaxial Growth +12