Extremely high electron mobility in a GaAs-Ga<i>x</i>In1−<i>x</i>P heterostructure grown by metalorganic chemical vapor deposition

Abstract

On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm−2. This high electron mobility is confirmed by cyclotron resonance measurements.