First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Abstract

We report the first successful room-temperature cw operations of a Ga0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).