First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Manijeh Razeghi, M. Defour, R. Blondeau, +6

Applied Physics Letters

Materials SciencePhotonicsGa0.25in0.75as0.5p0.5-inp LaserRoom TemperatureEngineering +13

Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL

J. Boucart, C. Starck, F. Gaborit, +11

IEEE Journal of Selected Topics in Quantum Electronics

Continuous WavePhotonicsElectrical EngineeringMetamorphic DbrRoom Temperature +11

1-mW CW-RT monolithic VCSEL at 1.55 μm

J. Boucart, C. Starck, F. Gaborit, +9

IEEE Photonics Technology Letters

Photonic DevicePhotonicsEngineeringInp-based CavityLaser Science +13

Disordering of Ga1−<i>x</i>Al<i>x</i>As-GaAs quantum well structures by donor sulfur diffusion

E. V. K. Rao, H. Thibierge, F. Brillouet, +2

Applied Physics Letters

Materials ScienceSemiconductorsEngineeringGaalas-gaas QuantumCrystalline Defects +10

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

J.L. Benchimol, G. Le Roux, H. Thibierge, +3

Journal of Crystal Growth

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringGainasp Alloys +8

First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate

Manijeh Razeghi, M. Defour, F. Omnès, +3

Applied Physics Letters

Si SubstrateEngineeringLaser ScienceLaser ApplicationsLaser Physics +14

First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

Manijeh Razeghi, R. Blondeau, M. Defour, +3

Applied Physics Letters

Inp-gainasp Light-emitting DiodeRoom-temperature Cw OperationEngineeringOptoelectronic DevicesLight-emitting Diodes +15

Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structures

SuPing Cheng, F. Brillouet, P. Correc

IEEE Journal of Quantum Electronics

Strip StructurePhotonicsElectrical EngineeringLateral LeakageAlgaas-gaas Stripe Lasers +13

GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etching

N. Bouadma, S. Grosmaire, F. Brillouet

Electronics Letters

PhotonicsEngineeringSemiconductor LasersIon Beam EtchingGaas/algaas Ridge +12

Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range

M. Quillec, M. Allovon, F. Brillouet, +3

Electronics Letters