Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

Nobuhiko P. Kobayashi, J.L. Benchimol, Yang Gao · Applied Physics Letters · 1987 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +16

Chemical beam epitaxy of indium phosphide

J.L. Benchimol, F. Alaoui, Yang Gao et al. · Journal of Crystal Growth · 1990 · 72 citations

Engineering, Materials Engineering, Materials Science +12

Growth of high-quality Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> by chemical beam epitaxy

W. T. Tsang, E. F. Schubert, T. H. Chiu et al. · Applied Physics Letters · 1987 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP

M. B. Panish · Progress in Crystal Growth and Characterization · 1986 · 37 citations

Engineering, Materials Engineering, Materials Science +9

Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers

W. T. Tsang · Applied Physics Letters · 1986 · 31 citations

Engineering, Materials Engineering, Materials Science +17