P. Wiśniewski

Statistics

Publications

Citations

1.2K

H-Index

Active since

1983

Affiliations

Institute of High Pressure Physics(Current)

Polish Academy of Sciences

TopGaN (Poland)

Institute for Microstructural Sciences

Université de Montpellier

P. Wiśniewski is an author at Institute of High Pressure Physics specializing in materials science, semiconductor physics, and semiconductor materials.

ORCID

Publications per year

1983–2018

Publications

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

C. Skierbiszewski, P. Perlin, P. Wiśniewski et al. · Applied Physics Letters · 2000 · 248 citations

Natural Sciences, Materials Science, Physics +14

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

E. Skuras, Ranjan Kumar, Robin L. Williams et al. · Semiconductor Science and Technology · 1991 · 85 citations

Engineering, Materials Science, Physics +17

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

P. Wiśniewski, P. Prystawko, I. Grzegory et al. · Applied Physics Letters · 2006 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz et al. · Applied Physics Letters · 2004 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of Nitrogen‐Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys

C. Skierbiszewski, P. Perlin, P. Wiśniewski et al. · physica status solidi (b) · 1999 · 63 citations

Natural Sciences, Materials Science, Physics +17

1–5 of 36