P. Prystawko

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani et al. · Journal of Applied Physics · 2010 · 158 citations · Full text

Engineering, Materials Science, Physics +17

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

M. Asif Khan, J. Yang, W. Knap et al. · Applied Physics Letters · 2000 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

P. Wiśniewski, P. Prystawko, I. Grzegory et al. · Applied Physics Letters · 2006 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

P. Kruszewski, P. Prystawko, Irmantas Kašalynas et al. · Semiconductor Science and Technology · 2014 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Giuseppe Greco, P. Prystawko, M. Leszczyński et al. · Journal of Applied Physics · 2011 · 64 citations

Engineering, Materials Engineering, Materials Science +17