P. Prystawko

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani et al. · Journal of Applied Physics · 2010 · 157 citations · Full text

Wide-bandgap Semiconductor, Thz Photonics, Terahertz Technology +16

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

M. Asif Khan, J. Yang, W. Knap et al. · Applied Physics Letters · 2000 · 103 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

P. Wiśniewski, P. Prystawko, I. Grzegory et al. · Applied Physics Letters · 2006 · 80 citations

Wide-bandgap Semiconductor, Point Defects, Engineering +17

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Giuseppe Greco, P. Prystawko, M. Leszczyński et al. · Journal of Applied Physics · 2011 · 64 citations

Wide-bandgap Semiconductor, Conductive Afm, Engineering +16

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

P. Kruszewski, P. Prystawko, Irmantas Kašalynas et al. · Semiconductor Science and Technology · 2014 · 64 citations

Materials Engineering, Semiconductors, Electrical Engineering +12