J. Yang

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 382 citations

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +9

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Self-heating in high-power AlGaN-GaN HFETs

R. Gaška, A. Osinsky, J. Yang et al. · IEEE Electron Device Letters · 1998 · 291 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 225 citations

Gan-based Hemts, Wide-bandgap Semiconductor, Electrical Engineering +11

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1998 · 213 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13