J. Yang - Concepedia

Author

J. Yang

University of South Carolina ORCID

Also Known As

J W Yang, J Yang, J. W. Yang, J. YANG, J. Yang, J.-W. YANG, J.W. Yang, Jin-Wu Yang, Jinwu Yang, Joonghwan Yang

Publications

3.6K

Citations

H-Index

Concepts

All Affiliations

University of South Carolina Rensselaer Polytechnic Institute Sensor Electronic Technology (United States)Omega Optics (United States)Jeonbuk National University

About

J. Yang is an author at University of South Carolina specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	39	3.3K
2	Applied Physics	27	34	3.1K
3	Medicine	2	2	35
4	Biomedical Engineering	2	2	35
5	Chemical Engineering	1	1	28

J. Yang

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor M.A. Khan, X. Hu, G. Sumin, IEEE Electron Device Letters Oxide HeterostructuresWide-bandgap SemiconductorElectrical Engineering5-μ Source-to-drain OpeningEngineering	2000	382
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates M. Asif Khan, X. Hu, Ahmad Tarakji, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringMicrowave PerformanceApplied Physics	2000	355
Self-heating in high-power AlGaN-GaN HFETs R. Gaška, A. Osinsky, J. Yang, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1998	291
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz V. Kumar, Wu Lu, R. Schwindt, IEEE Electron Device Letters Gan-based HemtsWide-bandgap SemiconductorElectrical EngineeringEngineeringF/sub T/	2002	225
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates R. Gaška, J. Yang, A. Osinsky, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyTwo-dimensional Electron Transport	1998	213
Enhancement mode AlGaN/GaN HFET with selectivelygrown <i>pn</i> junction gate X. Hu, G. Simin, J. Yang, Electronics Letters	2000	187
Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors M. Asif Khan, Q. Chen, C. J. Sun, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	1996	174
High-power 10-GHz operation of AlGaN HFET's on insulating SiC G.J. Sullivan, M.Y. Chen, J.A. Higgins, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringHigh Thermal ConductivityEngineeringRf Semiconductor	1998	121
SiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectors V. Adivarahan, G. Simin, J. Yang, Applied Physics Letters Sio 2Reverse Leakage CurrentsElectrical EngineeringSemiconductor TechnologyEngineering	2000	104
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates M. Asif Khan, J. Yang, W. Knap, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2000	103

Page 1