Statistics
Publications
43
Citations
3.5K
H-Index
28
Active since
1996
J. Yang is an author at University of South Carolina specializing in engineering, materials science, and semiconductor devices.
Publications per year
1996–2020
43
43
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 383 citations
Self-heating in high-power AlGaN-GaN HFETs
R. Gaška, A. Osinsky, J. Yang et al. · IEEE Electron Device Letters · 1998 · 298 citations
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 226 citations
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1998 · 214 citations
1–5 of 43