IEEE Electron Device Letters · 2000 · 383 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGate LeakageGate Leakage CurrentGate Oxide LeakageHeterostructure Field-effect TransistorsHeterostructure TransistorsSource-drain Leakage
We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-μ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET was more than six orders of magnitude smaller than for the HFET.
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Electron mobility in modulation-doped AlGaN–GaN heterostructures
R. Gaška, M. S. Shur, Alexei Bykhovski et al. · Applied Physics Letters · 1999 · 164 citations