R. Schwindt

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 226 citations

Engineering, Electrical Engineering, Materials Science +17

A comparative study of surface passivation on AlGaN/GaN HEMTs

Wu Lu, V. Kumar, R. Schwindt et al. · Solid-State Electronics · 2002 · 136 citations

Engineering, Materials Engineering, Materials Science +16

60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs

Özgür Aktaş, A. Kuliev, V. Kumar et al. · Solid-State Electronics · 2003 · 94 citations

Engineering, Electrical Engineering, Materials Engineering +15

Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

J.-W. Lee, A. Kuliev, V. Kumar et al. · IEEE Microwave and Wireless Components Letters · 2004 · 76 citations

Engineering, Electrical Engineering, Materials Science +17

A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen, V. Kumar, R. Schwindt et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 73 citations

Engineering, Electrical Engineering, Microelectronics +16