R. Schwindt - Concepedia

Author

R. Schwindt

University of Illinois Urbana-Champaign

Also Known As

R Schwindt, R. Schwindt, R.S. Schwindt, Randal Schwindt

Publications

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign Kyung Hee University University of South Carolina SVT Associates (United States)Bilkent University

About

R. Schwindt is an author at University of Illinois Urbana-Champaign specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	851
2	Applied Physics	12	12	793
3	Electrical Engineering	12	13	805
4	Antenna	2	2	81
5	Mechanical Engineering	1	1	35

R. Schwindt

Publications

954

Citations

H-Index

Page 1

	Year	Citations
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz V. Kumar, Wu Lu, R. Schwindt, IEEE Electron Device Letters Gan-based HemtsWide-bandgap SemiconductorElectrical EngineeringEngineeringF/sub T/	2002	225
A comparative study of surface passivation on AlGaN/GaN HEMTs Wu Lu, V. Kumar, R. Schwindt, Solid-State Electronics Electrical EngineeringEngineeringSurface ScienceApplied PhysicsAluminum Gallium Nitride	2002	135
60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs Özgür Aktaş, A. Kuliev, V. Kumar, Solid-State Electronics Wide-bandgap SemiconductorGamma Radiation EffectsElectrical EngineeringI–v CharacteristicsEngineering	2003	93
Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers J.-W. Lee, A. Kuliev, V. Kumar, IEEE Microwave and Wireless Components Letters Wide-bandgap SemiconductorElectrical EngineeringMicrowave Noise CharacteristicsEngineeringGan Hemt	2004	76
A low gate bias model extraction technique for AlGaN/GaN HEMTs Guang Chen, V. Kumar, R. Schwindt, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsElectronic Engineering	2006	73
DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates Wu Lu, V. Kumar, R. Schwindt, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesRf Semiconductor	2002	48
Spectral domain analysis of three symmetric coupled lines and application to a new bandpass filter R. Schwindt, Cam Nguyen IEEE Transactions on Microwave Theory and Techniques EngineeringFilter BankMicrowave TransmissionAntennaNew Bandpass Filter	1994	46
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz V. Kumar, A. Kuliev, R. Schwindt, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DensityHigh Performance 0.25	2003	35
Computer-aided analysis and design of a planar multilayer Marchand balun R. Schwindt, Cam Nguyen IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEngineeringRf SemiconductorMicrowave TransmissionMechanical Engineering	1994	35
AlGaN/InGaN HEMTs for RF current collapse suppression W. Lanford, V. Kumar, R. Schwindt, Electronics Letters	2004	33

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