R. Schwindt

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 225 citations

Gan-based Hemts, Wide-bandgap Semiconductor, Electrical Engineering +11

A comparative study of surface passivation on AlGaN/GaN HEMTs

Wu Lu, V. Kumar, R. Schwindt et al. · Solid-State Electronics · 2002 · 135 citations

Electrical Engineering, Engineering, Surface Science +5

60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs

Özgür Aktaş, A. Kuliev, V. Kumar et al. · Solid-State Electronics · 2003 · 93 citations

Wide-bandgap Semiconductor, Gamma Radiation Effects, Electrical Engineering +7

Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

J.-W. Lee, A. Kuliev, V. Kumar et al. · IEEE Microwave and Wireless Components Letters · 2004 · 76 citations

Wide-bandgap Semiconductor, Electrical Engineering, Microwave Noise Characteristics +11

A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen, V. Kumar, R. Schwindt et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 73 citations

Electrical Engineering, Engineering, Rf Semiconductor +11