Concepedia

60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs

Özgür Aktaş, A. Kuliev, V. Kumar, R. Schwindt, S. Toshkov, D. Costescu, James F. Stubbins, I. Adesida

Solid-State Electronics · 2003 · 94 citations · 13 references

Concepts

EngineeringElectrical EngineeringMaterials EngineeringElectronic MaterialsRadiation PhysicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGamma Radiation ResistanceGan-based High-frequency DevicesRadiation-hard Semiconductor MaterialsRadiation-tolerant Semiconductor Devices

References

13

Atomic geometry and electronic structure of native defects in GaN

Jörg Neugebauer, Chris G. Van de Walle · Physical review. B, Condensed matter · 1994 · 785 citations

Natural Sciences, Materials Science, Physics +17

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

Native defects in gallium nitride

E. L. Briggs, J. Bernholc · Physical review. B, Condensed matter · 1995 · 468 citations

Engineering, Materials Engineering, Materials Science +17

Defect Donor and Acceptor in GaN

D. C. Look, D. C. Reynolds, J. W. Hemsky et al. · Physical Review Letters · 1997 · 430 citations

Engineering, Materials Engineering, Materials Science +17

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 226 citations

Engineering, Electrical Engineering, Materials Science +17