IEEE Transactions on Microwave Theory and Techniques · 2006 · 73 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingHigh-frequency Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEquivalent Circuit AnalysisEquivalent Circuit ModelingGallium Nitride (Gan) MaterialsHigh-electron-mobility Transistor ModelingHigh-electron-mobility TransistorsInductance CalculationSmall-signal Equivalent Circuit ModelsSmall-signal Equivalent Circuits
The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.
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AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
V. Kumar, Wu Lu, R. Schwindt et al. · IEEE Electron Device Letters · 2002 · 226 citations
Determination of small-signal parameters of GaN-based HEMTs
E. Chigaeva, W. Walthes, Dirk Wiegner et al. · 2002 · 67 citations