A comparative study of surface passivation on AlGaN/GaN HEMTs

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

B.M. Green, K. Chu, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2000 · 723 citations

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High breakdown GaN HEMT with overlapping gate structure

N.-Q. Zhang, S. Keller, Giacinta Parish et al. · IEEE Electron Device Letters · 2000 · 308 citations

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GaN based transistors for high power applications

M. S. Shur · Solid-State Electronics · 1998 · 270 citations

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AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

Wu Lu, Jinwei Yang, M.A. Khan et al. · IEEE Transactions on Electron Devices · 2001 · 239 citations

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