E. L. Piner

Phase separation in InGaN grown by metalorganic chemical vapor deposition

N. A. El-Masry, E. L. Piner, S. X. Liu et al. · Applied Physics Letters · 1998 · 323 citations · Full text

Engineering, Chemical Engineering Separations, Thin Film Process Technology +17

12 W/mm AlGaN–GaN HFETs on Silicon Substrates

J. W. Johnson, E. L. Piner, Andrei Vescan et al. · IEEE Electron Device Letters · 2004 · 221 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +9

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

J.W. Chung, J. C. Roberts, E. L. Piner et al. · IEEE Electron Device Letters · 2008 · 204 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +10

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

Luke Yates, Jonathan Anderson, Xing Gu et al. · ACS Applied Materials & Interfaces · 2018 · 152 citations

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

E. L. Piner, M. K. Behbehani, N. A. El-Masry et al. · Applied Physics Letters · 1997 · 135 citations

Engineering, Ingan Epitaxial Films, Chemical Deposition +16