E. L. Piner - Concepedia

Author

E. L. Piner

Also Known As

E Piner, E. J. Piner, E. L. Piner, E. Piner, E.L Piner, E.L. Piner, Eddie Piner, Edwin L Piner, Edwin L. Piner, Edwin Piner

197

Publications

Citations

H-Index

101

Concepts

All Affiliations

Texas State University University of Florida North Carolina State University Lutron Electronics (United States)Massachusetts Institute of Technology

About

E. L. Piner is an author at Texas State University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	82	4.4K
2	Applied Physics	35	71	3.8K
3	Biomedical Engineering	7	7	427
4	Medicine	4	4	272
5	Natural Sciences	2	2	128

E. L. Piner

Publications

4.7K

Citations

H-Index

Page 1

	Year	Citations
Phase separation in InGaN grown by metalorganic chemical vapor deposition N. A. El-Masry, E. L. Piner, S. X. Liu, Applied Physics Letters EngineeringChemical Engineering SeparationsThin Film Process TechnologyChemistryChemical Deposition	1998	323
12 W/mm AlGaN–GaN HFETs on Silicon Substrates J. W. Johnson, E. L. Piner, Andrei Vescan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesConventional Device DesignsEngineering	2004	221
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs J.W. Chung, J. C. Roberts, E. L. Piner, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan HemtsEngineeringGate Metallization	2008	204
Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices Luke Yates, Jonathan Anderson, Xing Gu, ACS Applied Materials & Interfaces	2018	152
Effect of hydrogen on the indium incorporation in InGaN epitaxial films E. L. Piner, M. K. Behbehani, N. A. El-Masry, Applied Physics Letters EngineeringIngan Epitaxial FilmsChemical DepositionChemical EngineeringIndium Incorporation	1997	135
A comparative study of surface passivation on AlGaN/GaN HEMTs Wu Lu, V. Kumar, R. Schwindt, Solid-State Electronics Electrical EngineeringEngineeringSurface ScienceApplied PhysicsAluminum Gallium Nitride	2002	135
Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors B. S. Kang, H. T. Wang, F. Ren, Applied Physics Letters EngineeringBioelectrochemistryBiomedical EngineeringChemical EngineeringNanoelectronics	2007	125
Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes B. S. Kang, S. Kim, F. Ren, Applied Physics Letters Pressure-induced ChangesMembrane StructureElectrical EngineeringElectronic DevicesEngineering	2004	116
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates J.D. Brown, R. Borges, E. L. Piner, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2002	114
Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors B. S. Kang, H. T. Wang, Tanmay P. Lele, Applied Physics Letters NanomedicineElectrical EngineeringMedical ElectronicsUrologyEngineering	2007	109

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