J.W. Chung

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

J.W. Chung, W. E. Hoke, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2010 · 379 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

J.W. Chung, J. C. Roberts, E. L. Piner et al. · IEEE Electron Device Letters · 2008 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

Omair I. Saadat, J.W. Chung, E. L. Piner et al. · IEEE Electron Device Letters · 2009 · 101 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

J.W. Chung, Jae-Kyu Lee, E. L. Piner et al. · IEEE Electron Device Letters · 2009 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

J.W. Chung, E. L. Piner, Tomás Palacios · IEEE Electron Device Letters · 2009 · 66 citations · Full text

Engineering, Electrical Engineering, Materials Science +17