J. C. Roberts - Concepedia

Author

J. C. Roberts

Also Known As

J C Roberts, J ROBERTS, J Roberts, J. C Roberts, J. C. ROBERTS, J. C. Roberts, J. Roberts, J.C Roberts, J.C. Roberts, J.L. Roberts

246

Publications

6.9K

Citations

H-Index

183

Concepts

All Affiliations

North Carolina State University University of Florida Lutron Electronics (United States)

About

J. C. Roberts is an author at North Carolina State University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	88	5.2K
2	Applied Physics	31	59	3.8K
3	Medicine	13	13	799
4	Natural Sciences	10	11	1.1K
5	Social Sciences	2	2	48

J. C. Roberts

105

Publications

5.7K

Citations

H-Index

Page 1

	Year	Citations
Room temperature ferromagnetic properties of (Ga, Mn)N Meredith Reed, N. A. El-Masry, Hans H. Stadelmaier, Applied Physics Letters Materials ScienceMagnetismFerromagnetismMagnetic PropertiesRoom Temperature	2001	668
Lignin biodegradation and transformation J. C. Roberts Trends in Biochemical Sciences EngineeringEnvironmental EngineeringLigninBioremediationEnvironmental Remediation	1982	276
Synthesis of bryostatin 7 Masanori Kageyama, Tadashi Tamura, Michael H. Nantz, Journal of the American Chemical Society Bioorganic ChemistryAltmetric Attention ScoreBibliometricsOrganic ChemistryPharmaceutical Chemistry	1990	230
12 W/mm AlGaN–GaN HFETs on Silicon Substrates J. W. Johnson, E. L. Piner, Andrei Vescan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesConventional Device DesignsEngineering	2004	221
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs J.W. Chung, J. C. Roberts, E. L. Piner, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan HemtsEngineeringGate Metallization	2008	204
Threshold Voltage Instability in Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors Sen Huang, Shu Yang, J. C. Roberts, Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringV Gsmax	2011	158
Effect of hydrogen on the indium incorporation in InGaN epitaxial films E. L. Piner, M. K. Behbehani, N. A. El-Masry, Applied Physics Letters EngineeringIngan Epitaxial FilmsChemical DepositionChemical EngineeringIndium Incorporation	1997	135
Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors B. S. Kang, H. T. Wang, F. Ren, Applied Physics Letters EngineeringBioelectrochemistryBiomedical EngineeringChemical EngineeringNanoelectronics	2007	125
Determination of the critical layer thickness in the InGaN/GaN heterostructures C. A. Parker, J. C. Roberts, S. M. Bedair, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringPhotoluminescence EmissionCritical Layer Thickness	1999	117
Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes B. S. Kang, S. Kim, F. Ren, Applied Physics Letters Pressure-induced ChangesMembrane StructureElectrical EngineeringElectronic DevicesEngineering	2004	116

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