N. A. El-Masry - Concepedia

Author

N. A. El-Masry

Also Known As

N A El-Masry, N el-Masry, N. A. ELMASRY, N. A. EL‐MASRY, N. A. El-Masry, N. A. ElMasry, N. A. Elmasry, N. EL-Masry, N. El-Masry, N. Elmasry

205

Publications

Citations

H-Index

Concepts

All Affiliations

North Carolina State University United States Army Research Office

About

N. A. El-Masry is an author at North Carolina State University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	80	4.6K
2	Applied Physics	32	78	4.5K
3	Natural Sciences	16	16	1.4K
4	Chemical Engineering	3	3	489
5	Education	1	1	17

N. A. El-Masry

Publications

4.7K

Citations

H-Index

Page 1

	Year	Citations
Room temperature ferromagnetic properties of (Ga, Mn)N Meredith Reed, N. A. El-Masry, Hans H. Stadelmaier, Applied Physics Letters Materials ScienceMagnetismFerromagnetismMagnetic PropertiesRoom Temperature	2001	668
Phase separation in InGaN grown by metalorganic chemical vapor deposition N. A. El-Masry, E. L. Piner, S. X. Liu, Applied Physics Letters EngineeringChemical Engineering SeparationsThin Film Process TechnologyChemistryChemical Deposition	1998	323
MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications R. Venkatasubramanian, T.S. Colpitts, E. Watko, Journal of Crystal Growth Materials ScienceEngineeringFerroelectric ApplicationApplied PhysicsCondensed Matter Physics	1997	284
Violet/blue emission from epitaxial cerium oxide films on silicon substrates Ahmed Hisham Morshed, M. E. Moussa, S. M. Bedair, Applied Physics Letters Electrical EngineeringPhotoluminescenceEpitaxial CeriumEngineeringEpitaxial Growth	1997	230
Electrical characteristics of epitaxial CeO2 on Si(111) Lee Tye, N. A. El-Masry, Toyohiro Chikyow, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering	1994	157
Atomic layer epitaxy of III-V binary compounds S. M. Bedair, M. A. Tischler, T. Katsuyama, Applied Physics Letters SemiconductorsIi-vi SemiconductorEpitaxial GrowthOptical MaterialsEngineering	1985	146
Effect of hydrogen on the indium incorporation in InGaN epitaxial films E. L. Piner, M. K. Behbehani, N. A. El-Masry, Applied Physics Letters EngineeringIngan Epitaxial FilmsChemical DepositionChemical EngineeringIndium Incorporation	1997	135
Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics R. Venkatasubramanian, T.S. Colpitts, Brooks O’Quinn, Applied Physics Letters Bi2te3/sb2te3 SuperlatticesEngineeringThermoelectricsSemiconductor NanostructuresSemiconductors	1999	128
Determination of the critical layer thickness in the InGaN/GaN heterostructures C. A. Parker, J. C. Roberts, S. M. Bedair, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringPhotoluminescence EmissionCritical Layer Thickness	1999	117
Optical band gap dependence on composition and thickness of InxGa1−xN (0&lt;x&lt;0.25) grown on GaN C. A. Parker, J. C. Roberts, S. M. Bedair, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsX-ray SpectroscopyEngineeringBand Gap Measurements	1999	104

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