Applied Physics Letters · 1998 · 325 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor MaterialsThin FilmsChemical Vapor DepositionPhase SeparationSemiconductor Thin FilmsSpinodal DecompositionThin-film DepositionThin-film MaterialsMetalorganic Chemical Vapor DepositionMicrostructureNitride Thin FilmsNitrides Thin FilmsPhase FormationSelected Area Electron DiffractionSpinodal Decomposition In Thin FilmsX-ray Diffraction Analysis
We report on phase separation in thick InGaN films with up to 50% InN grown by metalorganic chemical vapor deposition from 690 to 780 °C. InGaN films with thicknesses of 0.5 μm were analyzed by θ–2θ x-ray diffraction, transmission electron microscopy (TEM), and selected area diffraction (SAD). Single phase InGaN was obtained for the as-grown films with <28% InN. However, for films with higher than 28% InN, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations
Solid phase immiscibility in GaInN
I. H. Ho, G. B. Stringfellow · Applied Physics Letters · 1996 · 1K citations