S. M. Bedair - Concepedia

Author

S. M. Bedair

Also Known As

Bedair, S. M., Bedair, S.M., Bedair,S. M., E.A. Berkman, R. J. Nemanich, S M Bedair, S. BEDAIR, S. Bedair, S. M. BEDAIR, S. M. Bedair

350

Publications

6.7K

Citations

H-Index

Concepts

All Affiliations

North Carolina State University RTI International

About

S. M. Bedair is an author at North Carolina State University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	130	5.9K
2	Applied Physics	39	126	5.9K
3	Natural Sciences	13	14	1.3K
4	Education	1	1	17
5	Biochemistry	1	1	12

S. M. Bedair

137

Publications

6.1K

Citations

H-Index

Page 1

	Year	Citations
Room temperature ferromagnetic properties of (Ga, Mn)N Meredith Reed, N. A. El-Masry, Hans H. Stadelmaier, Applied Physics Letters Materials ScienceMagnetismFerromagnetismMagnetic PropertiesRoom Temperature	2001	668
Phase separation in InGaN grown by metalorganic chemical vapor deposition N. A. El-Masry, E. L. Piner, S. X. Liu, Applied Physics Letters EngineeringChemical Engineering SeparationsThin Film Process TechnologyChemistryChemical Deposition	1998	323
Violet/blue emission from epitaxial cerium oxide films on silicon substrates Ahmed Hisham Morshed, M. E. Moussa, S. M. Bedair, Applied Physics Letters Electrical EngineeringPhotoluminescenceEpitaxial CeriumEngineeringEpitaxial Growth	1997	230
Electrical characteristics of epitaxial CeO2 on Si(111) Lee Tye, N. A. El-Masry, Toyohiro Chikyow, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering	1994	157
Atomic layer epitaxy of III-V binary compounds S. M. Bedair, M. A. Tischler, T. Katsuyama, Applied Physics Letters SemiconductorsIi-vi SemiconductorEpitaxial GrowthOptical MaterialsEngineering	1985	146
Effect of hydrogen on the indium incorporation in InGaN epitaxial films E. L. Piner, M. K. Behbehani, N. A. El-Masry, Applied Physics Letters EngineeringIngan Epitaxial FilmsChemical DepositionChemical EngineeringIndium Incorporation	1997	135
Determination of the critical layer thickness in the InGaN/GaN heterostructures C. A. Parker, J. C. Roberts, S. M. Bedair, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringPhotoluminescence EmissionCritical Layer Thickness	1999	117
A two-junction cascade solar-cell structure S. M. Bedair, M.F. Lamorte, John R. Hauser Applied Physics Letters Wide-bandgap SemiconductorCascade StructureElectrical EngineeringIi-vi SemiconductorEngineering	1979	111
Optical band gap dependence on composition and thickness of InxGa1−xN (0&lt;x&lt;0.25) grown on GaN C. A. Parker, J. C. Roberts, S. M. Bedair, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsX-ray SpectroscopyEngineeringBand Gap Measurements	1999	104
High optical quality AlInGaN by metalorganic chemical vapor deposition M. E. Aumer, S. F. LeBoeuf, F. G. McIntosh, Applied Physics Letters Materials EngineeringMaterials ScienceAluminium NitrideOptical MaterialsAlingan Films	1999	101

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