T. Katsuyama

Atomic layer epitaxy of III-V binary compounds

S. M. Bedair, M. A. Tischler, T. Katsuyama et al. · Applied Physics Letters · 1985 · 146 citations

Engineering, Materials Engineering, Materials Science +17

Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice

M. A. Tischler, T. Katsuyama, N. A. El-Masry et al. · Applied Physics Letters · 1985 · 54 citations

Engineering, Materials Engineering, Materials Science +17

High temperature (≳150 °C) and low threshold current operation of AlGaInP/Ga<i>x</i>In1−<i>x</i>P strained multiple quantum well visible laser diodes

T. Katsuyama, Ichiro Yoshida, J. Shinkai et al. · Applied Physics Letters · 1991 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

A new GaAsP—InGaAs strained-layer super-lattice light-emitting diode

S. M. Bedair, T. Katsuyama, Michael B. Timmons et al. · IEEE Electron Device Letters · 1984 · 40 citations

Engineering, Electrical Engineering, Physics +17

Laser selective deposition of GaAs on Si

S. M. Bedair, J. K. Whisnant, N.H. Karam et al. · Applied Physics Letters · 1986 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +15