M. A. Tischler

Luminescence degradation in porous silicon

M. A. Tischler, R. T. Collins, J. H. Stathis et al. · Applied Physics Letters · 1992 · 465 citations

Optical Materials, Engineering, Photoluminescence +12

Porous Silicon: From Luminescence to LEDs

R. T. Collins, Philippe M. Fauchet, M. A. Tischler · Physics Today · 1997 · 269 citations

Optical Materials, Engineering, Semiconductor Materials +23

An optically pumped GaN–AlGaN vertical cavity surface emitting laser

Joan M. Redwing, D.A.S. Loeber, Neal G. Anderson et al. · Applied Physics Letters · 1996 · 189 citations

Optical Materials, Engineering, Laser Science +16

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Semiconductors, Materials Science, Electrical Engineering +10

Atomic layer epitaxy of III-V binary compounds

S. M. Bedair, M. A. Tischler, T. Katsuyama et al. · Applied Physics Letters · 1985 · 146 citations

Semiconductors, Ii-vi Semiconductor, Epitaxial Growth +14