J. H. Stathis

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 522 citations

Device Modeling, Defect Tolerance, Electrical Engineering +15

Luminescence degradation in porous silicon

M. A. Tischler, R. T. Collins, J. H. Stathis et al. · Applied Physics Letters · 1992 · 465 citations

Optical Materials, Engineering, Photoluminescence +12

Dielectric breakdown mechanisms in gate oxides

S. Lombardo, J. H. Stathis, B.P. Linder et al. · Journal of Applied Physics · 2005 · 427 citations

Electrical Engineering, Engineering, Physics +13

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

E. Cartier, J. H. Stathis, D. A. Buchanan · Applied Physics Letters · 1993 · 391 citations

Engineering, Passivation Reaction, Chemistry +18

Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica

Peter E. Blöchl, J. H. Stathis · Physical Review Letters · 1999 · 286 citations

Materials Science, Hydrogen-related Defects, Engineering +15