J. H. Stathis - Concepedia

Author

J. H. Stathis

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

J H Stathis, J STATHIS, J. H. Stathis, J. Stathis, J.H Stathis, J.H. Stathis, James H Stathis, James H. Stathis, James H. Stathis Paek, James Stathis

200

Publications

9.1K

Citations

H-Index

109

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Institute for Microelectronics and Microsystems Universitat Autònoma de Barcelona GlobalFoundries (United States)

About

J. H. Stathis is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	50	112	8.2K
2	Applied Physics	46	93	7.3K
3	Natural Sciences	12	12	1.6K
4	Social Sciences	1	1	168
5	Chemical Engineering	1	1	123

J. H. Stathis

116

Publications

8.2K

Citations

H-Index

Page 1

	Year	Citations
Percolation models for gate oxide breakdown J. H. Stathis Journal of Applied Physics Device ModelingDefect ToleranceElectrical EngineeringEngineeringPhysics	1999	522
Luminescence degradation in porous silicon M. A. Tischler, R. T. Collins, J. H. Stathis, Applied Physics Letters Optical MaterialsEngineeringPhotoluminescenceLuminescence EfficiencyOptical Properties	1992	465
Dielectric breakdown mechanisms in gate oxides S. Lombardo, J. H. Stathis, B.P. Linder, Journal of Applied Physics Electrical EngineeringEngineeringPhysicsNanoelectronicsStress-induced Leakage Current	2005	427
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen E. Cartier, J. H. Stathis, D. A. Buchanan Applied Physics Letters EngineeringPassivation ReactionChemistryAtomic Hydrogen ExposureSilicon On Insulator	1993	391
Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica Peter E. Blöchl, J. H. Stathis Physical Review Letters Materials ScienceHydrogen-related DefectsEngineeringCrystalline DefectsPhysics	1999	286
Reliability projection for ultra-thin oxides at low voltage J. H. Stathis, D. J. DiMaria EngineeringOxide ReliabilityReliability EngineeringNanoelectronicsElectronic Packaging	2002	271
Reliability limits for the gate insulator in CMOS technology J. H. Stathis IBM Journal of Research and Development Aggressive ScalingElectrical EngineeringReliability EngineeringReliability LimitsDielectric Films	2002	229
Time-resolved photoluminescence in amorphous silicon dioxide J. H. Stathis, M. A. Kastner Physical review. B, Condensed matter PhotoluminescenceEngineeringPhysicsOptical PropertiesSpectroscopy	1987	217
Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits J. H. Stathis IEEE Transactions on Device and Materials Reliability EngineeringSilicon On InsulatorReliability EngineeringNanoelectronicsThermal Oxide	2001	203
A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates Sufi Zafar, Y. Kim, Vijay Narayanan, EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsField Effect Transistor	2006	200

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