J. H. Stathis

Statistics

Publications

117

Citations

8.3K

H-Index

Active since

1980

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

GlobalFoundries (United States)

Institute for Microelectronics and Microsystems

Universitat Autònoma de Barcelona

J. H. Stathis is an author at IBM Research - Thomas J. Watson Research Center specializing in materials science, engineering, and electrical engineering.

ORCID

Publications per year

1980–2020

117

Publications

117

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Luminescence degradation in porous silicon

M. A. Tischler, R. T. Collins, J. H. Stathis et al. · Applied Physics Letters · 1992 · 465 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dielectric breakdown mechanisms in gate oxides

S. Lombardo, J. H. Stathis, B.P. Linder et al. · Journal of Applied Physics · 2005 · 437 citations

Engineering, Electrical Engineering, Materials Science +16

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

E. Cartier, J. H. Stathis, D. A. Buchanan · Applied Physics Letters · 1993 · 403 citations

Engineering, Materials Engineering, Materials Science +17

Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica

Peter E. Blöchl, J. H. Stathis · Physical Review Letters · 1999 · 286 citations

Natural Sciences, Materials Engineering, Materials Science +17

1–5 of 117