B.P. Linder

Dielectric breakdown mechanisms in gate oxides

S. Lombardo, J. H. Stathis, B.P. Linder et al. · Journal of Applied Physics · 2005 · 437 citations

Engineering, Electrical Engineering, Materials Science +16

High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +9

The impact of gate-oxide breakdown on SRAM stability

R. Rodrı́guez, J. H. Stathis, B.P. Linder et al. · IEEE Electron Device Letters · 2002 · 128 citations

Engineering, Computer Engineering, Electrical Engineering +17

Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics

B.P. Linder, S. Lombardo, J. H. Stathis et al. · IEEE Electron Device Letters · 2002 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

A model for gate-oxide breakdown in CMOS inverters

R. Rodrı́guez, J. H. Stathis, B.P. Linder · IEEE Electron Device Letters · 2003 · 100 citations

Engineering, Computer Engineering, Electrical Engineering +17