B. Greene

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Sige Channels, Low Power Applications, Engineering +16

A 7nm CMOS technology platform for mobile and high performance compute application

B. Jagannathan, Akihisa Ogino, D. Jaeger et al. · 2017 · 58 citations

Engineering, Vlsi Design, Computer Architecture +17

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper

B. Greene, Qingqing Liang, K. Amarnath et al. · Symposium on VLSI Technology · 2006 · 40 citations

Engineering, Vlsi Design, Nm Ground Rules +16

Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices

S. Lee, R. Wachnik, P. Hyde et al. · Symposium on VLSI Technology · 2013 · 32 citations

Engineering, Vlsi Design, Scaled Finfet +17