High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai, +95

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen, +59

Sige ChannelsLow Power ApplicationsEngineeringVlsi DesignIntegrated Circuits +14

A 7nm CMOS technology platform for mobile and high performance compute application

B. Jagannathan, Akihisa Ogino, D. Jaeger, +149

EngineeringVlsi DesignComputer ArchitectureIntegrated CircuitsHardware Systems +15

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper

B. Greene, Qingqing Liang, K. Amarnath, +52

Symposium on VLSI Technology

EngineeringVlsi DesignNm Ground RulesHigh Performance 32NmIntegrated Circuits +14

Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices

S. Lee, R. Wachnik, P. Hyde, +14

Symposium on VLSI Technology

EngineeringVlsi DesignScaled FinfetFin DevicesSemiconductor Device +15

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

B. Frank Yang, R. Takalkar, Zhibin Ren, +36

Electrical EngineeringC NmosfetEngineeringSuperior Nmosfet StressorAdvanced Packaging (Semiconductors) +11

Design of high performance PFETs with strained si channel and laser anneal

Z. Luo, Y. F. Chong, J. Kim, +19

Wide-bandgap SemiconductorEngineeringLaser AnnealSemiconductor DeviceRf Semiconductor +14

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Rajan Arora, Zachary E. Fleetwood, En Xia Zhang, +7

IEEE Transactions on Nuclear Science

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Advanced modeling and optimization of high performance 32nm HKMG SOI CMOS for RF/analog SoC applications

S. Lee, J. Johnson, B. Greene, +28

Electrical EngineeringEngineeringVlsi DesignCircuit DesignCircuit System +12

Application of urbach rule optical absorption to composition measurement of Cd1−yZnyTe

A. J. Syllaios, Peng Liao, B. Greene, +3

Journal of Electronic Materials

Optical MaterialsEngineeringOptical PropertiesSpectroscopyNatural Sciences +8