R. Rodrı́guez - Concepedia

Author

R. Rodrı́guez

Also Known As

R Rodriguez, R Rodríguez, R Rodrı́guez, R. Rodriguez, R. Rodríguez, R. Rodríguez, R. Rodrı́guez, Raoul Rodriguez, Rocio Reyna Rodriguez, Rodriguez, Rosana

221

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

Universitat Autònoma de Barcelona IMEC Instituto de Microelectrónica de Sevilla KU Leuven Universidad de Sevilla

About

R. Rodrı́guez is an author at Universitat Autònoma de Barcelona specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	45	1.7K
2	Electrical Engineering	24	42	1.7K
3	Applied Physics	19	29	1.1K
4	Computer Engineering	13	15	580
5	Education	2	2	27

R. Rodrı́guez

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits R. Fernández, B. Kaczer, A. Nackaerts, Low-power ElectronicsElectrical EngineeringOn-chip CircuitsEngineeringRadio Frequency	2006	144
The impact of gate-oxide breakdown on SRAM stability R. Rodrı́guez, J. H. Stathis, B.P. Linder, IEEE Electron Device Letters Electrical EngineeringEngineeringSram StabilityNanoelectronicsStress-induced Leakage Current	2002	128
Emerging yield and reliability challenges in nanometer CMOS technologies Georges Gielen, Pieter De Wit, Elie Maricau, ReliabilityElectrical EngineeringNanometer Cmos TechnologiesEngineeringHardware Reliability	2008	119
Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics E. Miranda, J. Suñé, R. Rodrı́guez, IEEE Transactions on Electron Devices Electrical EngineeringCharge Transport MechanismEngineeringSemiconductor DevicePhysics	2000	109
A model for gate-oxide breakdown in CMOS inverters R. Rodrı́guez, J. H. Stathis, B.P. Linder IEEE Electron Device Letters Electrical EngineeringOxide Bd ConductionEngineeringStress-induced Leakage CurrentBias Temperature Instability	2003	100
A function-fit model for the soft breakdown failure mode E. Miranda, J. Suñé, R. Rodrı́guez, IEEE Electron Device Letters EngineeringEmpirical OneReliability EngineeringStressing ConditionNanoelectronics	1999	80
Probabilistic defect occupancy model for NBTI J. Martín-Martínez, B. Kaczer, M. Toledano-Luque, EngineeringDuty CycleDefect ToleranceOperations ResearchReliability Engineering	2011	78
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory	2016	69
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters R. Rodrı́guez, J. H. Stathis, B.P. Linder Electrical EngineeringExperimental VerificationEngineeringStress-induced Leakage CurrentBias Temperature Instability	2003	58
Soft breakdown fluctuation events in ultrathin SiO2 layers E. Miranda, J. Suñé, R. Rodrı́guez, Applied Physics Letters Electrical EngineeringEngineeringTransient ElectronicsPhysicsHigh Voltage Engineering	1998	56

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