R. Rodrı́guez

AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

R. Fernández, B. Kaczer, A. Nackaerts et al. · 2006 · 144 citations

Low-power Electronics, Electrical Engineering, On-chip Circuits +15

The impact of gate-oxide breakdown on SRAM stability

R. Rodrı́guez, J. H. Stathis, B.P. Linder et al. · IEEE Electron Device Letters · 2002 · 128 citations

Electrical Engineering, Engineering, Sram Stability +10

Emerging yield and reliability challenges in nanometer CMOS technologies

Georges Gielen, Pieter De Wit, Elie Maricau et al. · 2008 · 119 citations

Reliability, Electrical Engineering, Nanometer Cmos Technologies +14

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

E. Miranda, J. Suñé, R. Rodrı́guez et al. · IEEE Transactions on Electron Devices · 2000 · 109 citations

Electrical Engineering, Charge Transport Mechanism, Engineering +13

A model for gate-oxide breakdown in CMOS inverters

R. Rodrı́guez, J. H. Stathis, B.P. Linder · IEEE Electron Device Letters · 2003 · 100 citations

Electrical Engineering, Oxide Bd Conduction, Engineering +9