B. Kaczer

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 304 citations

Device Modeling, Electrical Engineering, Engineering +12

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Tibor Grasser, H. Reisinger, P.-J. Wagner et al. · 2010 · 282 citations · Full text

Engineering, Tdds Relies, Defect Tolerance +18

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, Mahmoud Rasras et al. · IEEE Transactions on Electron Devices · 2002 · 259 citations

Reliability, Electrical Engineering, Reliability Engineering +14

Ubiquitous relaxation in BTI stressing—New evaluation and insights

B. Kaczer, Tibor Grasser, Jean-Marc Roussel et al. · 2008 · 247 citations

Ubiquitous Relaxation, Electrical Engineering, Semiconductor Device +15

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7