B. Kaczer

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 309 citations

Engineering, Electrical Engineering, Microelectronics +16

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Tibor Grasser, H. Reisinger, P.-J. Wagner et al. · 2010 · 285 citations · Full text

Engineering, Electrical Engineering, Physics +17

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, Mahmoud Rasras et al. · IEEE Transactions on Electron Devices · 2002 · 259 citations

Engineering, Computer Engineering, Electrical Engineering +17

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

Ubiquitous relaxation in BTI stressing—New evaluation and insights

B. Kaczer, Tibor Grasser, Jean-Marc Roussel et al. · 2008 · 249 citations

Engineering, Electrical Engineering, Materials Science +17