H. Reisinger - Concepedia

Author

H. Reisinger

Infineon Technologies (Germany)ORCID

Also Known As

H Reisinger, H. Reisinger, Hans Reisinger, Hans. Reisinger, Reisinger, Hans

162

Publications

5.4K

Citations

H-Index

120

Concepts

All Affiliations

Infineon Technologies (Germany)TU Wien IMEC Infineon Technologies (Austria)Christian Doppler Laboratory for Thermoelectricity

About

H. Reisinger is an author at Infineon Technologies (Germany) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	77	4.9K
2	Applied Physics	33	66	4.2K
3	Natural Sciences	11	11	742
4	Education	7	7	298
5	Biostatistics	1	1	75

H. Reisinger

Publications

5.2K

Citations

H-Index

Page 1

	Year	Citations
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps Tibor Grasser, Ben Kaczer, Wolfgang Goes, IEEE Transactions on Electron Devices EngineeringSwitching Oxide TrapsReaction–diffusion MechanismCharge TransportNanoelectronics	2011	462
Origin of NBTI variability in deeply scaled pFETs B. Kaczer, Tibor Grasser, Ph. Roussel, Device ModelingElectrical EngineeringEngineeringNbti VariabilityPhysics	2010	304
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability Tibor Grasser, H. Reisinger, P.-J. Wagner, EngineeringTdds ReliesDefect ToleranceSemiconductor DeviceUbiquitous Recovery Behavior	2010	282
Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements H. Reisinger, Oliver Blank, Wolfgang Heinrigs, EngineeringVlsi DesignFast BulkMechanics ModelingNbti Degradation-	2006	269
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress H. Reisinger, Tibor Grasser, Wolfgang Gustin, EngineeringPhysical OriginDefect ToleranceStatistical AnalysisReliability Engineering	2010	199
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, IEEE Transactions on Electron Devices ReliabilityThreshold Voltage InstabilitiesElectrical EngineeringReliability EngineeringEngineering	2019	189
Analytic modeling of the bias temperature instability using capture/emission time maps Tibor Grasser, P.-J. Wagner, H. Reisinger, EngineeringEarth ScienceReliability EngineeringAtmospheric ScienceNumerical Simulation	2011	175
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors Tibor Grasser, H. Reisinger, P.-J. Wagner, Physical Review B Electrical EngineeringEngineeringPhysicsNanoelectronicsSpectroscopy	2010	149
Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures Harald Bachhofer, H. Reisinger, E. Bertagnolli, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringTransient ConductionEngineering	2001	142
Growth and characterization of a delta-function doping layer in Si H.P. Zeindl, T. Wegehaupt, I. Eisele, Applied Physics Letters SemiconductorsElectrical EngineeringQuantum ConfinementEngineeringEpitaxial Growth	1987	142

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