H. Reisinger

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 462 citations

Engineering, Switching Oxide Traps, Reaction–diffusion Mechanism +18

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 304 citations

Device Modeling, Electrical Engineering, Engineering +12

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Tibor Grasser, H. Reisinger, P.-J. Wagner et al. · 2010 · 282 citations · Full text

Engineering, Tdds Relies, Defect Tolerance +18

Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

H. Reisinger, Oliver Blank, Wolfgang Heinrigs et al. · 2006 · 269 citations

Engineering, Vlsi Design, Fast Bulk +16

The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

H. Reisinger, Tibor Grasser, Wolfgang Gustin et al. · 2010 · 199 citations

Engineering, Physical Origin, Defect Tolerance +21