Wolfgang Goes

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 462 citations

Engineering, Switching Oxide Traps, Reaction–diffusion Mechanism +18

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Tibor Grasser, H. Reisinger, P.-J. Wagner et al. · 2010 · 282 citations · Full text

Engineering, Tdds Relies, Defect Tolerance +18

A two-stage model for negative bias temperature instability

Tibor Grasser, B. Kaczer, Wolfgang Goes et al. · IEEE International Reliability Physics Symposium proceedings · 2009 · 211 citations

Engineering, Two-stage Model, Stability +18

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed et al. · Microelectronics Reliability · 2018 · 131 citations

Semiconductor Devices, Electrical Engineering, Rate Equations +12

Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

Tibor Grasser, H. Reisinger, Wolfgang Goes et al. · 2009 · 114 citations

Defect Tolerance, Electrical Engineering, Engineering +13