Ben Kaczer

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 462 citations

Engineering, Switching Oxide Traps, Reaction–diffusion Mechanism +18

The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

Tibor Grasser, Wolfgang Gös, Viktor Sverdlov et al. · 2007 · 174 citations

Relaxation Process, Engineering, Available Nbti Models +19

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

R. Degraeve, Ben Kaczer, G. Groeseneken · Microelectronics Reliability · 1999 · 172 citations

Materials Science, Reliability Engineering, Thin Oxide Layers +10

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Ben Kaczer, J. Franco, Pieter Weckx et al. · Microelectronics Reliability · 2018 · 65 citations

Circuit Time-dependent Variability, Electrical Engineering, Engineering +9

An energy-level perspective of bias temperature instability

Tibor Grasser, Ben Kaczer, Wolfgang Goes · 2008 · 57 citations

Engineering, Hydrogen Embrittlement, Chemistry +19