Ben Kaczer

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 476 citations

Engineering, Electrical Engineering, Physics +15

The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

Tibor Grasser, Wolfgang Gös, Viktor Sverdlov et al. · 2007 · 177 citations

Natural Sciences, Materials Science, Physics +12

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

R. Degraeve, Ben Kaczer, G. Groeseneken · Microelectronics Reliability · 1999 · 172 citations

Engineering, Materials Engineering, Materials Science +14

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Ben Kaczer, J. Franco, Pieter Weckx et al. · Microelectronics Reliability · 2018 · 66 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

An energy-level perspective of bias temperature instability

Tibor Grasser, Ben Kaczer, Wolfgang Goes · 2008 · 57 citations

Natural Sciences, Materials Engineering, Materials Science +13