The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes, +8

IEEE Transactions on Electron Devices

EngineeringSwitching Oxide TrapsReaction–diffusion MechanismCharge TransportNanoelectronics +16

The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

Tibor Grasser, Wolfgang Gös, Viktor Sverdlov, +1

Relaxation ProcessEngineeringAvailable Nbti ModelsNumerical SimulationQuantum Materials +17

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

R. Degraeve, Ben Kaczer, G. Groeseneken

Microelectronics Reliability

Materials ScienceReliability EngineeringThin Oxide LayersEngineeringHardware Reliability +8

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Ben Kaczer, J. Franco, Pieter Weckx, +11

Microelectronics Reliability

Circuit Time-dependent VariabilityElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current +7

An energy-level perspective of bias temperature instability

Tibor Grasser, Ben Kaczer, Wolfgang Goes

EngineeringHydrogen EmbrittlementChemistryStabilityNumerical Simulation +17

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

Ben Kaczer, R. Degraeve, Ph. Roussel, +1

Microelectronics Reliability

Electrical EngineeringNanoscale PhysicsEngineeringPhysicsNanoelectronics +8

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study

Ben Kaczer, R. Degraeve, Mahmoud Rasras, +3

Microelectronics Reliability

Electrical EngineeringReliability EngineeringEngineeringCircuit SystemHardware Reliability +6

Negative bias temperature instability: Recoverable versus permanent degradation

Tibor Grasser, Ben Kaczer

EngineeringDefect ToleranceNanoelectronicsNumerical SimulationThermodynamics +14

Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide

Simone Gerardin, Marta Bagatin, Andrea Cester, +2

IEEE Transactions on Nuclear Science

EngineeringVlsi DesignSingle IonMinimum-size MosfetsSingle Heavy-ion Strikes +15

Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design

Miguel Miranda, Hua Wang, Francky Catthoor, +5

EngineeringComputer ArchitectureSystem-level DesignSystem ReliabilityEmbedded Systems +20