Tibor Grasser

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das, Amritanand Sebastian, Eric Pop et al. · Nature Electronics · 2021 · 953 citations

Engineering, Electrical Engineering, Materials Science +12

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

Tibor Grasser · Microelectronics Reliability · 2011 · 534 citations · Full text

Natural Sciences, Materials Science, Physics +16

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 476 citations

Engineering, Electrical Engineering, Physics +15

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry et al. · Nature Electronics · 2021 · 350 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Yu. Yu. Illarionov, A. G. Banshchikov, Dmitry K. Polyushkin et al. · Nature Electronics · 2019 · 324 citations

Natural Sciences, Materials Engineering, Materials Science +10