Yu. Yu. Illarionov

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das, Amritanand Sebastian, Eric Pop et al. · Nature Electronics · 2021 · 865 citations

Electrical Engineering, Engineering, Nanoelectronics +6

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry et al. · Nature Electronics · 2021 · 330 citations · Full text

Electrical Engineering, Performance Limits, Scaled Cmos Devices +9

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Yu. Yu. Illarionov, A. G. Banshchikov, Dmitry K. Polyushkin et al. · Nature Electronics · 2019 · 310 citations

Semiconductor Technology, Electrical Engineering, Two-dimensional Field-effect Transistors +4

The role of charge trapping in MoS ₂ /SiO ₂ and MoS ₂ /hBN field-effect transistors

Yu. Yu. Illarionov, G. Rzepa, Michael Waltl et al. · 2D Materials · 2016 · 252 citations · Full text

Engineering, Charge Transport, Semiconductor Device +16

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

Yu. Yu. Illarionov, Michael Waltl, G. Rzepa et al. · ACS Nano · 2016 · 195 citations