Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve, +1

Journal of Applied Physics

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorIntegrated Circuit Devices +16

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens, +4

IEEE Transactions on Electron Devices

EngineeringGlow DischargeNew InsightsElectron SpectroscopyNanoelectronics +18

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen, +18

Non-volatile MemoryResistive RamEngineeringExcellent PerformanceEmerging Memory Technology +15

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano, +6

IEEE Electron Device Letters

Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics +11

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

R. Degraeve, G. Groeseneken, R. Bellens, +2

EngineeringThin OxidesSemiconductor DeviceNanoelectronicsElectronic Packaging +15

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer, Tibor Grasser, Ph. Roussel, +6

Device ModelingElectrical EngineeringEngineeringNbti VariabilityPhysics +10

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Michel Houssa, L. Pantisano, L.-Å. Ragnarsson, +6

Materials Science and Engineering R Reports

Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering +8

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, Mahmoud Rasras, +3

IEEE Transactions on Electron Devices

ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability +12

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen, Ludovic Goux, Sergiu Clima, +7

IEEE Transactions on Electron Devices

Materials ScienceEndurance/retention PerformanceElectrical EngineeringEngineeringEndurance/retention Performance Tradeoff +9

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici, +35

Microelectronic Engineering

Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsApplied Physics +5