Concepedia
Statistics
Publications
280
Citations
14.3K
H-Index
57
Active since
1994
Affiliations
IMEC(Current)
KU Leuven
Liverpool John Moores University
R. Degraeve is an author at IMEC specializing in engineering, semiconductor devices, and microelectronics.
Publications per year
1994–2024
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
M. L. Green, E. P. Gusev, R. Degraeve et al. · Journal of Applied Physics · 2001 · 772 citations
Engineering, Materials Engineering, Materials Science +17
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations
Engineering, Electrical Engineering, Materials Science +17
10&#x00D7;10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation
B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 607 citations
Engineering, Electrical Engineering, Materials Science +12
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 360 citations
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
R. Degraeve, G. Groeseneken, R. Bellens et al. · 2002 · 336 citations
1–5 of 280