R. Degraeve

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve et al. · Journal of Applied Physics · 2001 · 767 citations

Engineering, Optoelectronic Devices, Integrated Circuits +18

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 637 citations

Engineering, Glow Discharge, New Insights +20

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 603 citations

Non-volatile Memory, Resistive Ram, Engineering +17

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 357 citations

Device Modeling, Electrical Engineering, Engineering +13

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

R. Degraeve, G. Groeseneken, R. Bellens et al. · 2002 · 334 citations

Engineering, Thin Oxides, Semiconductor Device +17