L. Pantisano

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 357 citations

Device Modeling, Electrical Engineering, Engineering +13

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Michel Houssa, L. Pantisano, L.-Å. Ragnarsson et al. · Materials Science and Engineering R Reports · 2006 · 274 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Non-volatile Memory, Engineering, Oxidation Resistance +17

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

Paolo Magnone, Felice Crupi, Gino Giusi et al. · IEEE Transactions on Device and Materials Reliability · 2009 · 124 citations · Full text

Gate Stacks, Gate Dielectrics, Electrical Engineering +13

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

R. J. Carter, E. Cartier, A. Kerber et al. · Applied Physics Letters · 2003 · 118 citations

Materials Science, Interface State Passivation, Engineering +10