L. Goux

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 607 citations

Engineering, Electrical Engineering, Materials Science +12

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Natural Sciences, Materials Engineering, Materials Science +16

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 194 citations

Engineering, Electrical Engineering, Materials Science +16

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

L. Goux, J. G. Lisoni, M. Jurczak et al. · Journal of Applied Physics · 2010 · 192 citations

Natural Sciences, Materials Engineering, Materials Science +17

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

Yang Yin Chen, B. Govoreanu, L. Goux et al. · IEEE Transactions on Electron Devices · 2012 · 185 citations

Engineering, Computer Engineering, Fault-tolerant Computing +10