Y. Y. Chen

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Non-volatile Memory, Engineering, Oxidation Resistance +17

Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells

L. Goux, A. Fantini, Y. Y. Chen et al. · ECS Solid State Letters · 2014 · 31 citations · Full text

Materials Science, Electrical Engineering, Electronic Devices +15

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

L. Goux, Nagarajan Raghavan, A. Fantini et al. · Journal of Applied Physics · 2014 · 29 citations

Soft-breakdown Regime, Engineering, Emerging Memory Technology +18

Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

S. Steffens, Christiane Becker, Daniel Amkreutz et al. · Applied Physics Letters · 2014 · 23 citations · Full text

Solid Phase, Engineering, Electrical Performance +16