Yang Yin Chen

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen, Ludovic Goux, Sergiu Clima et al. · IEEE Transactions on Electron Devices · 2013 · 250 citations

Materials Science, Endurance/retention Performance, Electrical Engineering +11

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

Yang Yin Chen, B. Govoreanu, L. Goux et al. · IEEE Transactions on Electron Devices · 2012 · 182 citations

Lrs State, Electrical Engineering, Engineering +7

Filament observation in metal-oxide resistive switching devices

Umberto Celano, Yang Yin Chen, Dirk J. Wouters et al. · Applied Physics Letters · 2013 · 102 citations

Engineering, Microscopy, Oxide-based Rram Devices +19

Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current

Yang Yin Chen, Masanori Komura, R. Degraeve et al. · 2013 · 96 citations

Oxygen Vacancy, Electrical Engineering, Non-volatile Memory +15

Understanding of the endurance failure in scaled HfO<inf>2</inf>-based 1T1R RRAM through vacancy mobility degradation

Yang Yin Chen, R. Degraeve, Sergiu Clima et al. · 2012 · 80 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17