Masanori Komura

Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current

Yang Yin Chen, Masanori Komura, R. Degraeve et al. · 2013 · 96 citations

Oxygen Vacancy, Electrical Engineering, Non-volatile Memory +15

Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

Yang Yin Chen, Masanori Komura, R. Degraeve et al. · 2013 · 55 citations

Non-volatile Memory, Electrical Engineering, Engineering +8

Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopants

Y. Y. Chen, R. Roelofs, A. Redolfi et al. · 2014 · 32 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation

L. Goux, A. Fantini, R. Degraeve et al. · 2013 · 28 citations

Non-volatile Memory, Engineering, Memory Design +25

Engineering of Hf<inf>1−x</inf>Al<inf>x</inf>O<inf>y</inf> amorphous dielectrics for high-performance RRAM applications

A. Fantini, Ludovic Goux, Sergiu Clima et al. · 2014 · 20 citations

Electrical Engineering, High-performance Rram Applications, Engineering +12