Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current - Concepedia

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Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

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Citations

0

References

2013

Year

Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte,

Unknown Venue

Non-volatile MemoryElectrical EngineeringEngineeringData RetentionRram CellLow OperatingMemory DeviceMemory DevicesSemiconductor MemoryResistive Random-access MemoryMicroelectronics

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