Concepedia

Resistive Random-access Memory

Resistive Random-Access Memory is a non-volatile solid-state memory device that stores data by modulating the resistance of a dielectric material through the application of voltage, distinguishing itself from other memory technologies by employing resistive switching mechanisms at the nanoscale.

2.7K

Publications

149.7K

Citations

8.9K

Authors

1.3K

Institutions

Publications per year

2017–2026

1.3K

Variants

ReramRram

Parents

Publications

2.7K

Resistive switching in transition metal oxides

Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text

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Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Aurélien Manchon, Jakub Železný, Ioan Mihai Miron et al. · Reviews of Modern Physics · 2019 · 1.6K citations · Full text

, , +17

SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Sandeep Kaur Kingra, Vivek Parmar, Che‐Chia Chang et al. · Scientific Reports · 2020 · 1.4K citations · Full text

, , +15

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Feng Pan, Shuang Gao, Chen Chen et al. · Materials Science and Engineering R Reports · 2014 · 1.4K citations

, , +14

Optoelectronic resistive random access memory for neuromorphic vision sensors

Feichi Zhou, Zheng Zhou, Jiewei Chen et al. · Nature Nanotechnology · 2019 · 1.3K citations

, , +13

1–5 of 2.7K

Authors

8.9K

  1. SY
    Shimeng Yu

    Georgia Institute of Technology, United States

    85 publications · 8.9K citations

    41

    h-index

  2. BG
    Bin Gao

    Tsinghua University, China

    76 publications · 6K citations

    40

    h-index

  3. QL
    Qi Liu

    Chinese Academy of Sciences, China

    66 publications · 4.3K citations

    37

    h-index

  4. ML
    Ming Liu

    Chinese Academy of Sciences, China

    59 publications · 4K citations

    37

    h-index

  5. DI
    Daniele Ielmini

    Politecnico di Milano, Italy

    58 publications · 4.1K citations

    36

    h-index

1–5 of 8.9K

Institutions

1.3K

  1. Institute of Microelectronics

    Beijing, China

    65 h-index

    1.5K publications

    87.7K citations

  2. Chinese Academy of Sciences

    Beijing, China

    56 h-index

    905 publications

    54.5K citations

  3. Tsinghua University

    Beijing, China

    51 h-index

    649 publications

    50K citations

  4. Stanford University

    Stanford, United States

    50 h-index

    349 publications

    34.1K citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    49 h-index

    477 publications

    28K citations

  6. Peking University

    Beijing, China

    46 h-index

    651 publications

    39.6K citations

  7. National Tsing Hua University

    Hsinchu, Taiwan

    40 h-index

    305 publications

    24K citations

  8. National Sun Yat-sen University

    Kaohsiung City, Taiwan

    37 h-index

    684 publications

    27.2K citations

1–8 of 1.3K

Venues

  1. Applied Physics Letters

    202 publications · 9.9K citations

    56

    h-index

  2. IEEE Electron Device Letters

    215 publications · 10.2K citations

    55

    h-index

  3. IEEE Transactions on Electron Devices

    183 publications · 11.3K citations

    55

    h-index

  4. Advanced Materials

    40 publications · 6.7K citations

    36

    h-index

  5. Scientific Reports

    51 publications · 4.1K citations

    34

    h-index

1–5