B. Govoreanu - Concepedia

Author

B. Govoreanu

IMEC ORCID

Also Known As

B Govoreanu, B. Govoreanu, Bogdan Govoreanu, F. M. Bufler, Govoreanu, B., Govoreanu, Bogdan, Kubicek, Stefan

232

Publications

6.1K

Citations

H-Index

129

Concepts

All Affiliations

IMEC KU Leuven Liverpool John Moores University University of Antwerp Ghent University

About

B. Govoreanu is an author at IMEC specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	42	109	5.4K
2	Applied Physics	39	94	4.8K
3	Natural Sciences	3	3	216
4	Social Sciences	2	2	180
5	Medicine	1	1	129

B. Govoreanu

123

Publications

5.9K

Citations

H-Index

Page 1

	Year	Citations
10&#x00D7;10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation B. Govoreanu, Gouri Sankar Kar, YY Chen, Non-volatile MemoryResistive RamEngineeringExcellent PerformanceEmerging Memory Technology	2011	603
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM Yang Yin Chen, Ludovic Goux, Sergiu Clima, IEEE Transactions on Electron Devices Materials ScienceEndurance/retention PerformanceElectrical EngineeringEngineeringEndurance/retention Performance Tradeoff	2013	250
High-k dielectrics for future generation memory devices (Invited Paper) J. A. Kittl, Karl Opsomer, M. Popovici, Microelectronic Engineering Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsApplied Physics	2009	246
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L. Goux, P. Czarnecki, Y. Y. Chen, Applied Physics Letters Non-volatile MemoryEngineeringOxidation ResistanceOxygen PermeabilityChemistry	2010	229
Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM Yang Yin Chen, B. Govoreanu, L. Goux, IEEE Transactions on Electron Devices Lrs StateElectrical EngineeringEngineeringSet/reset PulseApplied Physics	2012	182
VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices B. Govoreanu, Pieter Blomme, M. Rosmeulen, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringNonvolatile Memory ChipLow-voltage Low-power	2003	182
Te-based chalcogenide materials for selector applications Alin Velea, Karl Opsomer, Wouter Devulder, Scientific Reports	2017	160
Causes and consequences of the stochastic aspect of filamentary RRAM R. Degraeve, A. Fantini, Nagarajan Raghavan, Microelectronic Engineering Pattern FormationComputational NeuroscienceMolecular BiologyCytoskeletonSocial Sciences	2015	129
Intrinsic switching variability in HfO<inf>2</inf> RRAM A. Fantini, L. Goux, R. Degraeve, Materials ScienceElectrical EngineeringElectronic DevicesEngineeringPhysics	2013	128
Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks R. Degraeve, M. Cho, B. Govoreanu, EngineeringTrap Density ProfileCharge TransportElectromagnetic CompatibilityCharge Injection	2008	96

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