M. Popovici

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Uwe Schroeder, Ekaterina Yurchuk, Johannes Müller et al. · Japanese Journal of Applied Physics · 2014 · 403 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

Tony Schenk, Uwe Schroeder, Milan Pešić et al. · ACS Applied Materials & Interfaces · 2014 · 193 citations

Natural Sciences, Materials Engineering, Materials Science +17

Future of dynamic random-access memory as main memory

Seong Keun Kim, M. Popovici · MRS Bulletin · 2018 · 185 citations

Engineering, Computer Engineering, Computer Science +14

Vertical Ferroelectric HfO<inf>2</inf> FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

Karine Florent, A. Subirats, Kaustuv Banerjee et al. · 2018 · 155 citations

Engineering, Computer Engineering, Electrical Engineering +16