Tony Schenk

Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors

Milan Pešić, Franz P. G. Fengler, Luca Larcher et al. · Advanced Functional Materials · 2016 · 914 citations · Full text

Engineering, Materials Engineering, Materials Science +17

On the structural origins of ferroelectricity in HfO2 thin films

Xiahan Sang, Everett D. Grimley, Tony Schenk et al. · Applied Physics Letters · 2015 · 643 citations

Natural Sciences, Materials Science, Physics +16

Stabilizing the ferroelectric phase in doped hafnium oxide

Michael Hoffmann, Uwe Schroeder, Tony Schenk et al. · Journal of Applied Physics · 2015 · 581 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Johannes Müller, T. S. Böscke, Stefan Müller et al. · 2013 · 490 citations

Natural Sciences, Electrical Engineering, Materials Science +13

Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO₂ Thin Films

Everett D. Grimley, Tony Schenk, Xiahan Sang et al. · Advanced Electronic Materials · 2016 · 423 citations

Natural Sciences, Materials Engineering, Physics +17