Publication | Closed Access
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
476
Citations
9
References
2013
Year
Unknown Venue
EngineeringResulting DevicesThin Film Process TechnologyNvm PropertiesMfm CapacitorsMultiferroicsFerroelectric ApplicationMemory DeviceFerroelectric MemoriesScalable ApproachFerroelectric Hafnium OxideMaterials ScienceMaterials EngineeringElectrical EngineeringOxide ElectronicsMicroelectronicsElectronic MaterialsApplied PhysicsSemiconductor MemoryThin FilmsFunctional Materials
With the ability to engineer ferroelectricity in HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.
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