Karl Opsomer

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte et al. · Nano Letters · 2014 · 332 citations

Observed Filament, Such Filament, Engineering +19

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman et al. · Journal of The Electrochemical Society · 2008 · 263 citations

Materials Science, Dislocation Densities, Electrical Engineering +11

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7

Te-based chalcogenide materials for selector applications

Alin Velea, Karl Opsomer, Wouter Devulder et al. · Scientific Reports · 2017 · 160 citations · Full text

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

Liang Wen, Philippe Roussel, Olalla Varela Pedreira et al. · ACS Applied Materials & Interfaces · 2016 · 138 citations