Karl Opsomer

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte et al. · Nano Letters · 2014 · 338 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman et al. · Journal of The Electrochemical Society · 2008 · 265 citations

Engineering, Materials Engineering, Materials Science +17

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

Te-based chalcogenide materials for selector applications

Alin Velea, Karl Opsomer, Wouter Devulder et al. · Scientific Reports · 2017 · 168 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

Liang Wen, Philippe Roussel, Olalla Varela Pedreira et al. · ACS Applied Materials & Interfaces · 2016 · 145 citations

Natural Sciences, Electrical Engineering, Materials Science +17