Recommended Methods to Study Resistive Switching Devices

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Advanced Electronic Materials

EngineeringPower ElectronicsPhase Change MemoryRs TechnologyElectronic Devices +16

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte, +8

Nano Letters

Observed FilamentSuch FilamentEngineeringMicroscopyBiomedical Engineering +17

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul, +18

Electrical EngineeringEngineeringTransistor Layout ParametersHigh-density Monolithic 3DScaled Transistor +13

Causes and consequences of the stochastic aspect of filamentary RRAM

R. Degraeve, A. Fantini, Nagarajan Raghavan, +6

Microelectronic Engineering

Pattern FormationComputational NeuroscienceMolecular BiologyCytoskeletonSocial Sciences +4

Intrinsic switching variability in HfO<inf>2</inf> RRAM

A. Fantini, L. Goux, R. Degraeve, +7

Materials ScienceElectrical EngineeringElectronic DevicesEngineeringPhysics +11

Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current

Yang Yin Chen, Masanori Komura, R. Degraeve, +12

Oxygen VacancyElectrical EngineeringNon-volatile MemoryEngineeringStorage Systems +13

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

Attilio Belmonte, Woo‐Sik Kim, Boon Teik Chan, +5

IEEE Transactions on Electron Devices

Aluminium NitrideEngineeringVlsi DesignCell IntegrityEmerging Memory Technology +16

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte, +5

The Journal of Physical Chemistry Letters

EngineeringMicroscopyMechanical EngineeringSoft MatterPhase Change Memory +21

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Adrian Chasin, J. Franco, K. Triantopoulos, +12

2021 IEEE International Electron Devices Meeting (IEDM)

EngineeringSemiconductor DeviceSemiconductorsDegradation ProcessPbti Reliability +14

Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

Yang Yin Chen, Masanori Komura, R. Degraeve, +12

Non-volatile MemoryElectrical EngineeringEngineeringData RetentionRram Cell +6