Causes and consequences of the stochastic aspect of filamentary RRAM

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Electron Devices · 2003 · 549 citations

Engineering, Electrical Engineering, Physics +17

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen, Ludovic Goux, Sergiu Clima et al. · IEEE Transactions on Electron Devices · 2013 · 255 citations

Natural Sciences, Materials Engineering, Materials Science +11

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Daniele Ielmini, F. Nardi, C. Cagli · Applied Physics Letters · 2010 · 182 citations

Engineering, Electrical Engineering, Materials Science +17

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

Tibor Grasser, H. Reisinger, P.-J. Wagner et al. · Physical Review B · 2010 · 151 citations

Engineering, Electrical Engineering, Physics +17

Intrinsic switching variability in HfO<inf>2</inf> RRAM

A. Fantini, L. Goux, R. Degraeve et al. · 2013 · 134 citations

Engineering, Electrical Engineering, Materials Science +17