P.-J. Wagner - Concepedia

Concepedia

Author

P.-J. Wagner

Infineon Technologies (Germany)

Also Known As

P.-J Wagner, P.-J. Wagner, P.J. Wagner, Paul-Jrgen Wagner, Paul-Jurgen Wagner, Paul-Jürgen Wagner, Paul-JÜrgen Wagner, Paul-Jürgen Wagner

24

Publications

1.6K

Citations

13

H-Index

43

Concepts

All Affiliations

Infineon Technologies (Germany)IMEC TU Wien Christian Doppler Laboratory for Thermoelectricity Infineon Technologies (Austria)

PW

About

P.-J. Wagner is an author at Infineon Technologies (Germany) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	1.6K
2	Applied Physics	12	12	1.4K
3	Natural Sciences	3	3	444
4	Education	1	1	62
5	Computer Engineering	1	1	175

P.-J. Wagner

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13

Publications

1.6K

Citations

13

H-Index

	Year	Citations
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps Tibor Grasser, Ben Kaczer, Wolfgang Goes, IEEE Transactions on Electron Devices EngineeringSwitching Oxide TrapsReaction–diffusion MechanismCharge TransportNanoelectronics	2011	462
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability Tibor Grasser, H. Reisinger, P.-J. Wagner, EngineeringTdds ReliesDefect ToleranceSemiconductor DeviceUbiquitous Recovery Behavior	2010	282
Analytic modeling of the bias temperature instability using capture/emission time maps Tibor Grasser, P.-J. Wagner, H. Reisinger, EngineeringEarth ScienceReliability EngineeringAtmospheric ScienceNumerical Simulation	2011	175
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors Tibor Grasser, H. Reisinger, P.-J. Wagner, Physical Review B Electrical EngineeringEngineeringPhysicsNanoelectronicsSpectroscopy	2010	149
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise Tibor Grasser, H. Reisinger, Wolfgang Goes, Defect ToleranceElectrical EngineeringEngineeringPhysicsRandom Telegraph Noise	2009	114
Recent advances in understanding the bias temperature instability Tibor Grasser, B. Kaczer, Wolfgang Goes, EngineeringMeasurement SchemePhysicsMeasurementCalibration	2010	105
The &#x2018;permanent&#x2019; component of NBTI: Composition and annealing Tibor Grasser, Th. Aichinger, Gregor Pobegen, EngineeringPower ElectronicsDefect ToleranceOxide DefectsSemiconductor Device	2011	71
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability Tibor Grasser, P.-J. Wagner, Philipp Hehenberger, IEEE Transactions on Device and Materials Reliability EngineeringMeasurementEducationMeasurement TechniquesActive Research	2008	62
On the frequency dependence of the bias temperature instability Tibor Grasser, B. Kaczer, H. Reisinger, Electrical EngineeringEngineeringPhysicsBias Temperature InstabilityDevice Reliability	2012	54
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias J. Franco, B. Kaczer, M. Toledano-Luque, Device ModelingElectrical EngineeringEngineeringPhysicsNanotechnology	2013	28

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